Noise in MgO barrier magnetic tunnel junctions with CoFeB electrodes: Influence of annealing temperature
نویسندگان
چکیده
Low frequency noise has been measured in magnetic tunnel junctions with MgO barriers and magnetoresistance values up to 235%. The authors investigated the noise for different degrees of crystallization and CoFeB/MgO interface quality depending on the annealing temperature. The authors report an extremely low 1/ f noise, compared to magnetic junctions with Al2O3 barriers. The origin of the low frequency noise is discussed and it is attributed to localized charge traps with the MgO barriers. © 2007 American Institute of Physics. DOI: 10.1063/1.2749433
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